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| Datasheet File OCR Text: |
| ie\q ipa075n15n3 g "%&$ !"# tm 3 power-transistor features emowmsq bm^wuzs q . 5 b i < ? g ? > b 5 c 9 c d 1 > 3 5 r 9h"[z# q
t ? @ 5 b 1 d 9 > 7 d 5 = @ 5 b 1 d e b 5 q ) 2 6 b 5 5 < 5 1 4 @ < 1 d 9 > 7 + ? " , 3 ? = @ < 9 1 > d q * e 1 < 9 6 9 5 4 1 3 3 ? b 4 9 > 7 d ? $ )# 6 ? b d 1 b 7 5 d 1 @ @ < 9 3 1 d 9 ? > q # 4 5 1 < 6 ? b 8 9 7 8 6 b 5 a e 5 > 3 i c g 9 d 3 8 9 > 7 1 > 4 c i > 3 8 b ? > ? e c b 5 3 d 9 6 9 3 1 d 9 ? > q " 1 < ? 7 5 > 6 b 5 5 1 3 3 ? b 4 9 > 7 d ? #
maximum ratings, 1 d t v t e > < 5 c c ? d 8 5 b g 9 c 5 c @ 5 3 9 6 9 5 4 parameter symbol conditions unit ? > d 9 > e ? e c 4 b 1 9 > 3 e b b 5 > d i 9 t 8 t ,+ 6 t 8
t +) ) e < c 5 4 4 b 1 9 > 3 e b b 5 > d *# i 9$\ax_q t 8 t )/* f 1 < 1 > 3 8 5 5 > 5 b 7 i c 9 > 7 < 5 @ e < c 5 e 6h i 9 r =h " )((( y@ ! 1 d 5 c ? e b 3 5 f ? < d 1 7 5 v =h q*( j ) ? g 5 b 4 9 c c 9 @ 1 d 9 ? > p `[` t 8 t +1 k ( @ 5 b 1 d 9 > 7 1 > 4 c d ? b 1 7 5 d 5 = @ 5 b 1 d e b 5 t v t _`s t # 3 < 9 = 1 d 9 3 3 1 d 5 7 ? b i # ' # *# , 5 5 6 9 7 e b 5 value )# $ , - 1 > 4 $ , v 9h )-( j r 9h"[z#$ymd /&- y " i 9 ,+ 6 product summary type # ) ' ' ! package e=%id**(%+ marking (/-c)-c + 5 f @ 1 7 5 cb %( c % cd www..net ipa075n15n3 g parameter symbol conditions unit min. typ. max. thermal characteristics - 8 5 b = 1 < b 5 c 9 c d 1 > 3 5 : e > 3 d 9 ? > 3 1 c 5 r `t@8 % % +&0 a'k electrical characteristics, 1 d t v t e > < 5 c c ? d 8 5 b g 9 c 5 c @ 5 3 9 6 9 5 4 static characteristics b 1 9 > c ? e b 3 5 2 b 5 1 ; 4 ? g > f ? < d 1 7 5 v "7g#9hh v =h . i 9 = )-( % % j ! 1 d 5 d 8 b 5 c 8 ? < 4 f ? < d 1 7 5 v =h"`t# v 9h 4 v =h i 9 v * + , 0 5 b ? 7 1 d 5 f ? < d 1 7 5 4 b 1 9 > 3 e b b 5 > d i 9hh v 9h . v =h . t v t % (&) ) r6 v 9h . v =h . t v t % )( )(( ! 1 d 5 c ? e b 3 5 < 5 1 ; 1 7 5 3 e b b 5 > d i =hh v =h . v 9h . % ) )(( z6 b 1 9 > c ? e b 3 5 ? > c d 1 d 5 b 5 c 9 c d 1 > 3 5 r 9h"[z# v =h . i 9 % -&1 /&- y " v =h . i 9 % .&* /&1 ! 1 d 5 b 5 c 9 c d 1 > 3 5 r = % *&+ % " i^mz_o[zpao`mzoq g r_ g v 9h g5*g i 9 g r 9h"[z#ymd i 9 ,- 01 % h values + 5 f @ 1 7 5 cb %( c % cd ipa075n15n3 g parameter symbol conditions unit min. typ. max. dynamic characteristics # > @ e d 3 1 @ 1 3 9 d 1 > 3 5 c u__ % -,/( /*0( \< ( e d @ e d 3 1 @ 1 3 9 d 1 > 3 5 c [__ % .+0 0,1 + 5 f 5 b c 5 d b 1 > c 6 5 b 3 1 @ 1 3 9 d 1 > 3 5 c ^__ % )( % - e b > ? > 4 5 < 1 i d 9 = 5 t p"[z# % ** % z_ + 9 c 5 d 9 = 5 t ^ % *- % - e b > ? 6 6 4 5 < 1 i d 9 = 5 t p"[rr# % -( % 1 < < d 9 = 5 t r % )- % ! 1 d 5 8 1 b s 5 8 1 b 1 3 d 5 b 9 c d 9 3 c ,# ! 1 d 5 d ? c ? e b 3 5 3 8 1 b 7 5 q s_ % */ % z8 ! 1 d 5 d ? 4 b 1 9 > 3 8 1 b 7 5 q sp % )) % , g 9 d 3 8 9 > 7 3 8 1 b 7 5 q _c % ** % ! 1 d 5 3 8 1 b 7 5 d ? d 1 < q s % /( 1+ ! 1 d 5 @ < 1 d 5 1 e f ? < d 1 7 5 v \xm`qma % - % j ( e d @ e d 3 8 1 b 7 5 q [__ v 99 . v =h . % )/1 *+1 z8 reverse diode 9 ? 4 5 3 ? > d 9 > ? e c 6 ? b g 1 b 4 3 e b b 5 > d i h % % ,+ 6 9 ? 4 5 @ e < c 5 3 e b b 5 > d i h$\ax_q % % )/* 9 ? 4 5 6 ? b g 1 b 4 f ? < d 1 7 5 v h9 v =h . i < t v t % (&1 )&* j + 5 f 5 b c 5 b 5 3 ? f 5 b i d 9 = 5 t ^^ % ),, % z_ + 5 f 5 b c 5 b 5 3 ? f 5 b i 3 8 1 b 7 5 q ^^ % ,1. % z8 ,# , 5 5 6 9 7 e b 5 6 ? b 7 1 d 5 3 8 1 b 7 5 @ 1 b 1 = 5 d 5 b 4 5 6 9 > 9 d 9 ? > v g . i < 4 i h p i < 'p t v c t 8 t values v =h . v 9h . f & " j v 99 . v =h . i 9 r = " v 99 . i 9 v =h d ? . + 5 f @ 1 7 5 cb %( c % cd ipa075n15n3 g 1 power dissipation 2 drain current p `[` 4r" t 8 # i 9 4r" t 8 v =h " . 3 safe operating area 4 max. transient thermal impedance i 9 4r" v 9h t 8 t d 4( z `t@8 4r" t \ # @ 1 b 1 = 5 d 5 b t \ @ 1 b 1 = 5 d 5 b d 4 t \ ' t c 9 > 7 < 5 @ e < c 5 (&() (&(* (&(- (&) (&* (&- 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 0 10 -1 10 -2 t p [s] z t h j c [ k / w ] 0 10 20 30 40 0 50 100 150 200 t c [c] p t o t [ w ] 0 10 20 30 40 50 0 50 100 150 200 t c [c] i d [ a ] v c v c v c = c = c 98 10 3 10 2 10 1 10 0 10 -1 10 3 10 2 10 1 10 0 10 -1 v ds [v] i d [ a ] + 5 f @ 1 7 5 cb %( c % cd ipa075n15n3 g 5 typ. output characteristics 6 typ. drain-source on resistance i 9 4r" v 9h t v t r 9h"[z# 4r" i 9 t v t @ 1 b 1 = 5 d 5 b v =h @ 1 b 1 = 5 d 5 b v =h 7 typ. transfer characteristics 8 typ. forward transconductance i 9 4r" v =h k v 9h g5*g i 9 g r 9h"[z#ymd g r_ 4r" i 9 t v t @ 1 b 1 = 5 d 5 b t v . . . . 0 2 4 6 8 10 12 0 20 40 60 80 100 i d [a] r d s ( o n ) [ m ] t t 0 20 40 60 80 100 0 2 4 6 8 v gs [v] i d [ a ] 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 i d [a] g f s [ s ] . . . . . 0 20 40 60 80 100 120 0 1 2 3 v ds [v] i d [ a ] + 5 f @ 1 7 5 cb %( c % cd ipa075n15n3 g 9 drain-source on-state resistance 10 typ. gate threshold voltage r 9h"[z# 4r" t v i 9 v =h . v =h"`t# 4r" t v v =h 4 v 9h @ 1 b 1 = 5 d 5 b i 9 11 typ. capacitances 12 forward characteristics of reverse diode c 4r" v 9h v =h . f & " j i < 4r" v h9 # @ 1 b 1 = 5 d 5 b t v `e\ 10! 0 4 8 12 16 20 24 -60 -20 20 60 100 140 180 t j [c] r d s ( o n ) [ m ] v v 0 0.5 1 1.5 2 2.5 3 3.5 4 -60 -20 20 60 100 140 180 t j [c] v g s ( t h ) [ v ] 8u__ 8[__ 8^__ 10 5 10 4 10 3 10 2 10 1 0 20 40 60 80 100 120 v ds [v] c [ p f ] t t t t 10 3 10 2 10 1 10 0 0 0.5 1 1.5 2 v sd [v] i f [ a ] + 5 f @ 1 7 5 cb %( c % cd ipa075n15n3 g 13 avalanche characteristics 14 typ. gate charge i 6h 4r" t 6j r =h " v =h 4r" q sm`q i 9 @ e < c 5 4 @ 1 b 1 = 5 d 5 b t v"_`m^`# @ 1 b 1 = 5 d 5 b v 99 15 drain-source breakdown voltage 16 gate charge waveforms v 7g"9hh# 4r" t v i 9 = . . . 0 2 4 6 8 10 0 20 40 60 80 q gate [nc] v g s [ v ] 135 140 145 150 155 160 165 170 -60 -20 20 60 100 140 180 t j [c] v b r ( d s s ) [ v ] v =h q g ate v s _"`t# q s "`t# q s _ q s p q _c q g t t t 1 10 100 1 10 100 1000 t av [s] i a s [ a ] + 5 f @ 1 7 5 cb %( c % cd ipa075n15n3 g pg-to220-fp: outline + 5 f @ 1 7 5 cb %( c % cd ipa075n15n3 g ' $ ( , % - 0 + 2 ( - , & ( 4 $ , ( , 2 ' ( 1 # - " 3 + $ , 2 1 ' * * ( , , - $ 4 $ , 2 ! $ 0 $ & 0 # $ # 1 & 3 0 , 2 $ $ - % " - , # ( 2 ( - , 1 - 0 " ' 0 " 2 $ 0 ( 1 2 ( " 1 ( 2 ' 0 $ 1 . $ " 2 2 - , 7 $ 6 + . * $ 1 - 0 ' ( , 2 1 & ( 4 $ , ' $ 0 $ ( , , 7 2 7 . 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